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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C DESCRIPTION *DC Current Gain -hFE = 30(Min)@ IC= -0.3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- TIP42A -80V(Min)- TIP42B; -100V(Min)- TIP42C *Complement to Type TIP41/41A/41B/41C APPLICATIONS *Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER TIP42 TIP42A VCBO Collector-Base Voltage TIP42B TIP42C TIP42 TIP42A VCEO Collector-Emitter Voltage TIP42B TIP42C VEBO IC ICM IB B VALUE -40 -60 UNIT V -80 -100 -40 -60 V -80 -100 -5 -6 -10 -2 65 W 2 150 -65~150 V A A A Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range PC Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER TIP42 TIP42A IC= -30mA; IB= 0 TIP42B TIP42C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage TIP42 TIP42A ICES Collector Cutoff Current TIP42B TIP42C TIP42/42A ICEO Collector Cutoff Current TIP42B/42C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product VCE= -60V; IB= 0 B TIP42/42A/42B/42C CONDITIONS MIN -40 -60 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -80 -100 IC= -6A ;IB= -0.6A IC= -6A ; VCE= -4V VCE= -40V; VEB= 0 VCE= -60V; VEB= 0 -1.5 -2.0 V V -0.4 VCE= -80V; VEB= 0 VCE= -100V; VEB= 0 VCE= -30V; IB= 0 B mA -0.7 mA VEB= -5V; IC= 0 IC= -0.3A ; VCE= -4V IC= -3A ; VCE= -4V IC= -0.5A ;VCE= -10V 30 15 3 -1.0 mA 75 MHz isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C isc Websitewww.iscsemi.cn |
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